FEATURES ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability ■ Lead free product
DESCRIPTION The SSF8N60 is a new generation of high voltage
N–Channel enhancement mode power MOSFETs and is obtained t...
