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SSM3J108TU
Field Effect Transistor Silicon P-Channel MOS Type
Description
SSM3J108TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications 1.8V drive Low on-resistance: Ron = 363mΩ (max) (@VGS = −1.8 V) Ron = 230mΩ (max) (@VGS = −2.5 V) Ron = 158mΩ (max) (@VGS = −4.0 V) 2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05 Unit: mm Absolute Maxim...
Toshiba Semiconductor
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