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SSM6J214FE

Part Number	SSM6J214FE
Manufacturer	Toshiba Semiconductor
Description	Silicon P-Channel MOSFET
Published	Sep 12, 2014
Detailed Description	SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J214FE ○ Power Management Switch App...
Datasheet	SSM6J214FE PDF File

Overview

SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J214FE ○ Power Management Switch Applications • 1.
8 V drive • Low ON-resistance: RDS(ON) = 149.
6 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 77.
6 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 57.
0 mΩ (max) (@VGS = -4.
5 V) RDS(ON) = 50.
0 mΩ (max) (@VGS = -10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range Symbol Rating Unit VDSS -30 V VGSS ± 12 V ID (Note 1) -3.
6 A IDP (Note 1) -7.
2 PD (Note 2) 500 mW t = 10s 700 Tch 150 °C Tstg −55 to 150 °C ES6 1,2,5,...

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