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SSM6J215FE
Silicon P-Channel MOSFET
Description
MOSFET
s Silicon P-Channel MOS (U-MOS) SSM6J215FE 1. Applications Power Management Switches 2. Features (1) 1.5-V gate drive
voltage
. (2) Low drain-source on-resistance : RDS(ON) = 154 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 104 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 79 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 59 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuratio...
Toshiba Semiconductor
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