SSM6J21TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J21TU
High Current Switching Applications
Suitable for high-density mounting due to compact package Low on resistance: Ron = 88 mΩ (max) (@VGS = -2.5 V) Unit: mm
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source vol...
