SSM6J25FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6J25FE
High Speed Switching Applications
Optimum for high-density mounting in small packages Low on-resistance: Ron = 260mΩ (max) (@VGS = -4 V)
Ron = 430mΩ (max) (@VGS = -2.5 V)
Unit: mm
1.6±0.05 1.2±0.05
0.2±0.05
1.6±0.05 1.0±0.05 0.5 0.5
Absolute Maximum Ratings (Ta...
