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SSM6J511NU
Silicon P-Channel MOSFET
Description
MOSFET
s Silicon P-Channel MOS (U-MOS) SSM6J511NU 1. Applications Power Management Switches 2. Features (1) 1.8 V gate drive
voltage
. (2) Low drain-source on-resistance : RDS(ON) = 13.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 10 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J511NU 1.2.5.6 Drain 3. Gate 4. Source ©2016 Toshiba Corporation...
Toshiba
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