SSS2301A
P-Channel Enhancement Mode MOSFET
Product Summary
VDS (V)
-20V
SOT-23
D
ID (A)
-2.3A
RDS(ON) (mΩ) Max 130 @VGS = -4.5V
G
190 @VGS = -2.5V
S
D
FEATURES
Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free.
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gat...
