Silicon Transistor. STC4250L Datasheet

STC4250L Datasheet PDF


Part Number

STC4250L

Description

NPN Silicon Transistor

Manufacture

KODENSHI

Total Page 6 Pages
Datasheet
Download STC4250L Datasheet


STC4250L
Applications
Power amplifier application
High current switching application
Features
High current : IC=2A
Complementary pair with STA3250L
STC4250L
NPN Silicon Transistor
PIN Connection
TO -92L
1: Emitter 2 :Collector 3: Base
Ordering Information
Type NO.
Marking
Package Code
STC4250L
STC4250
YWW
TO-92L
HW2: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)
Absolute Maximum Ratings
[Ta=25]
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector Power dissipation
VCBO
VCEO
VEBO
IC
IB
PC
PC
50
50
5
2
0.4
1
2
V
V
V
A
A
W
W
Junction temperature
TJ
Storage temperature range
Tstg
Device mounted on ceramic substrate (250mm2ⅹ0.8t)
150
-55~150
°C
°C
KSD-T0D013-000
1

STC4250L
STC4250L
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage
BVCEO
IC=10mA, IB=0
Collector cut-off current
ICBO
VCB=50V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE VCE=2V, IC=0.5A*
hFE VCE=2V, IC=1.5A*
Collector-emitter saturation voltage
VCE(sat)
IC=1A, IB=0.05A*
Base-emitter saturation voltage
VBE(sat)
IC=1A, IB=0.05A*
Transition frequency
fT VCE=2V, IC=50mA
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
Turn-on Time
Switching
Time
Storage Time
Fall Time
*: Pulse test: tP300µs, Duty cycle2%
ton
tstg
tf
<
[Ta=25]
Min. Typ. Max. Unit
50 - - V
- - 0.1 μA
- - 0.1 μA
120 - 240
40 -
-
- - 0.35 V
- - 1.2 V
- 240 - MHz
- 15 - pF
- 100
-
- 300
-
nS
- 50
-
KSD-T0D013-000
2





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