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STGAP2GSN driver Datasheet PDFIsolated 3A single gate driver Isolated 3A single gate driver |
Part Number | STGAP2GSN |
---|---|
Description | Isolated 3A single gate driver |
Feature | STGAP2GSN
Datasheet
Isolated 3 A single gate driver for Enhancement mode GaN FETs
Product status link STGAP2GSN
Product label
Features
• High voltage rail up to 1700 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN • Gate driving voltage up to 15 V • 3. 3 V, 5 V TTL/CMOS inputs with hysteresis • Temperature shut-down protection • Standby function • Narrow body SO-8 package Application • Motor d. |
Manufacture | STMicroelectronics |
Datasheet |
Part Number | STGAP2GSN |
---|---|
Description | Isolated 3A single gate driver |
Feature | STGAP2GSN
Datasheet
Isolated 3 A single gate driver for Enhancement mode GaN FETs
Product status link STGAP2GSN
Product label
Features
• High voltage rail up to 1700 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN • Gate driving voltage up to 15 V • 3. 3 V, 5 V TTL/CMOS inputs with hysteresis • Temperature shut-down protection • Standby function • Narrow body SO-8 package Application • Motor d. |
Manufacture | STMicroelectronics |
Datasheet |
Part Number | STGAP2GSN |
---|---|
Description | Isolated 3A single gate driver |
Feature | STGAP2GSN
Datasheet
Isolated 3 A single gate driver for Enhancement mode GaN FETs
Product status link STGAP2GSN
Product label
Features
• High voltage rail up to 1700 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN • Gate driving voltage up to 15 V • 3. 3 V, 5 V TTL/CMOS inputs with hysteresis • Temperature shut-down protection • Standby function • Narrow body SO-8 package Application • Motor d. |
Manufacture | STMicroelectronics |
Datasheet |
Part Number | STGAP2GSN |
---|---|
Description | Isolated 3A single gate driver |
Feature | STGAP2GSN
Datasheet
Isolated 3 A single gate driver for Enhancement mode GaN FETs
Product status link STGAP2GSN
Product label
Features
• High voltage rail up to 1700 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN • Gate driving voltage up to 15 V • 3. 3 V, 5 V TTL/CMOS inputs with hysteresis • Temperature shut-down protection • Standby function • Narrow body SO-8 package Application • Motor d. |
Manufacture | STMicroelectronics |
Datasheet |
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