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STM132N Transistor Datasheet PDFN-Channel Logic Level Enhancement Mode Field Effect Transistor N-Channel Logic Level Enhancement Mode Field Effect Transistor |
　
　
　
| Part Number | STM132N |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Feature | STM132NGreen
Product
SamHop Microelectr onics Corp. N-Channel Logic Level Enhan cement Mode Field Effect Transistor Ve r 1. 0 PRODUCT SUMMARY VDSS ID RDS(ON ) (mΩ) Max 100V 8A 19 @ VGS=10V 27 @ VGS=4. 5V FEATURES Super high dense c ell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Paramet er VDS Drain-Source Voltage VGS Gate- Source Voltage ID Drain Current-Contin uous c IDM -Pulsed a c TC=25°C TC=70 °C EAS Single Pulse Avalanche Energy d TC=25°C PD Maximum Power Dissipation TC=70°C TJ, TSTG . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
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| Part Number | STM132N |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Feature | STM132NGreen
Product
SamHop Microelectr onics Corp. N-Channel Logic Level Enhan cement Mode Field Effect Transistor Ve r 1. 0 PRODUCT SUMMARY VDSS ID RDS(ON ) (mΩ) Max 100V 8A 19 @ VGS=10V 27 @ VGS=4. 5V FEATURES Super high dense c ell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Paramet er VDS Drain-Source Voltage VGS Gate- Source Voltage ID Drain Current-Contin uous c IDM -Pulsed a c TC=25°C TC=70 °C EAS Single Pulse Avalanche Energy d TC=25°C PD Maximum Power Dissipation TC=70°C TJ, TSTG . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
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