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STM6726 Transistor Datasheet PDFN-Channel Logic Level Enhancement Mode Field Effect Transistor N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Part Number | STM6726 |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Feature | STM6726Green
Product
SamHop Microelectr onics Corp. N-Channel Logic Level Enhan cement Mode Field Effect Transistor Ve r 1. 0 PRODUCT SUMMARY VDSS ID RDS(ON ) (mΩ) Max 18 @ VGS=10V 60V 8. 4A 25 @ VGS=4. 5V FEATURES Super high dense ce ll design for low RDS(ON). Rugged and r eliable. Suface Mount Package. S O-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25°C u nless otherwise noted) Symbol Paramete r VDS Drain-Source Voltage VGS Gate-S ource Voltage ID Drain Current-Continu ous c IDM -Pulsed a c TC=25°C TC=70° C EAS Single Pulse Avalanche Energy d TC=25°C PD Maximum Power Dissipation TC=70°C TJ, TSTG . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
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| Part Number | STM6726 |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Feature | STM6726Green
Product
SamHop Microelectr onics Corp. N-Channel Logic Level Enhan cement Mode Field Effect Transistor Ve r 1. 0 PRODUCT SUMMARY VDSS ID RDS(ON ) (mΩ) Max 18 @ VGS=10V 60V 8. 4A 25 @ VGS=4. 5V FEATURES Super high dense ce ll design for low RDS(ON). Rugged and r eliable. Suface Mount Package. S O-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25°C u nless otherwise noted) Symbol Paramete r VDS Drain-Source Voltage VGS Gate-S ource Voltage ID Drain Current-Continu ous c IDM -Pulsed a c TC=25°C TC=70° C EAS Single Pulse Avalanche Energy d TC=25°C PD Maximum Power Dissipation TC=70°C TJ, TSTG . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
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