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STP3467

Stanson Technology
Part Number STP3467
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STP3467 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3467 is the P-Channel enhancement mode power field e...
Datasheet PDF File STP3467 PDF File

STP3467
STP3467

Overview
...ffect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION TSOP-6P D SD FEATURE ◆ -20V/-5.
0A, RDS(ON)=90mohm@VGS=-4.
5V ◆ -20V/-3.
5A, RDS(ON)=110mohm@VGS=-2.
5V ◆ -20V/-1.
7A, RDS(ON)=140mohm@VGS=-1.
8V 67YW D DG Y: Year A: Week Code ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional an-resistance and ...


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