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STP3467ST6RG

Part Number	STP3467ST6RG
Manufacturer	Stanson Technology
Description	MOSFET
Published	Sep 25, 2016
Detailed Description	STP3467 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3467 is the P-Channel enhancement mode power field e...
Datasheet	STP3467ST6RG PDF File

Overview

STP3467 P Channel Enhancement Mode MOSFET -5.
2A DESCRIPTION The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION TSOP-6P D SD FEATURE ◆ -20V/-5.
0A, RDS(ON)=90mohm@VGS=-4.
5V ◆ -20V/-3.
5A, RDS(ON)=110mohm@VGS=-2.
5V ◆ -20V/-1.
7A, RDS(ON)=140mohm@VGS=-1.
8V 67Y...

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