STPSC12C065-Y Datasheet





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STPSC12C065-Y Datasheet - Automotive 650V power Schottky silicon carbide diode

STPSC12C065-Y   STPSC12C065-Y  

Datasheet: STPSC12C065-Y datasheet

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Description: STPSC12C065-Y Automotive 650 V power Sc hottky silicon carbide diode $ . . 7 2$& $ . Features • No or neglig ible reverse recovery • Switching beh avior independent of temperature • De dicated to PFC applications • High fo rward surge capability • AEC-Q101 qua lified • PPAP capable • ECOPACK®2 compliant component Datasheet - produc tion data Description The SiC diode is an ultrahigh performance power Schottk y diode. It is manufactured using a sil icon carbide substrate. The wide band g ap material allows the design of a Scho ttky diode structure with a 650 V ratin g. Due to the Schottky construction, no recovery is shown at turn-off and ring ing patterns are negligible. The minimal capacitive


Manufacture Part Number Description

STMicroelectronics

STPSC12C065-Y

Automotive 650V power Schottky silicon carbide diode




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