Dual 650V power Schottky silicon carbide diode
Description
STPSC6TH13TI
Dual 650 V power Schottky silicon carbide diode in series
,QVXODWHG72$%
Features
No or negligible reverse recovery Switching behavior independent of
temperature Suited for specific bridge-less topologies High forward surge capability Insulated package:
– Capacitance: 7 pF – Insulated voltage: 2500 V rms
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