STS26N3LLH6
N-channel 30 V, 0.0038 Ω, 26 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET
Features
Type STS26N3LLH6
VDSS 30 V
RDS(on) max
0.0044 Ω
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge
ID 26 A
Applications
■ Switching applications
D...
