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STU8NM60ND
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor STU8NM60ND FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source
Voltage
- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃)...
INCHANGE
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