N-Channel Enhancement Mode Field Effect Transistor
Description
STU/D9916L
SamHop Microelectronics Corp. Preliminary Mar.25 2004
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
www.DataSheet4U.com 30V
FEATURES
( m £[ ) Max
ID
25A
RDS(ON)
Super high dense cell design for low RDS(ON).
30@ VGS = 10V 40@ VGS = 4.5V
Rugged and reliable. TO-252 and TO-251 Package.
D
D G S
G D S
G
SDU SERIES TO...
