TRANSISTOR. SVSP7N60FE2 Datasheet

SVSP7N60FE2 Datasheet PDF

Part SVSP7N60FE2
Description 600V DP MOS POWER TRANSISTOR
Feature SVSP7N60FE2; Silan Microelectronics SVSP7N60F(D)E2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVSP7.
Manufacture Silan Microelectronics
Datasheet
Download SVSP7N60FE2 Datasheet




SVSP7N60FE2
Silan
Microelectronics
SVSP7N60F(D)E2_Datasheet
7A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVSP7N60F(D)E2 is an N-channel enhancement mode high voltage
power MOSFETs produced using Silan’s DP MOS technology. It
achieves low conduction loss and switching losses. It leads the
design engineers to their power converters with high efficiency, high
power density, and superior thermal behavior. Furthermore, it’s
universal applicable, for example, it is suitable for hard and soft
switching topologies.
FEATURES
7A,600V, RDS(on)(typ.)=0.48@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Enhanced avalanche capability
Extreme dv/dt rated
High peak current capability
NOMENCLATURE
2
1
3
1.Gate 2.Drain 3.Source
123
TO-220F-3L
1
3
TO-252-2L
Silan DPMOS Code of D-
Well process
SVSPXNEXXXXEX
Process breakdown logo
default: first generation process
E2: second generation process;
Process Version, P
E3: third generation process
denotes PASSIVATION
Nominal current,using 1 or 2 digits:
Packageinformation.Examp:F:TO-220F.
Example:4 denotes 4A
Specification mark, distinguish different gate oxygen
N denotes N Channel
thickness and different versions of products, can default
Special Features indication, May be omitted.
Example: E denotes embeded ESD structure
Nominal Voltage,using 2 digits
Example:60 denotes 600V,65 denotes 650V.
ORDERING INFORMATION
Part No.
SVSP7N60FE2
SVSP7N60DE2TR
Package
TO-220F-3L
TO-252-2L
Marking
P7N60FE2
P7N60DE2
Hazardous
substance control
Halogen free
Halogen free
Packing
Tube
Tape&Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 1 of 8



SVSP7N60FE2
Silan
Microelectronics
SVSP7N60F(D)E2_Datasheet
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Drain Current Pulsed
Power Dissipation (TC=25C)
- Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Reverse diode dv/dt (Note 2)
MOSFET dv/dt ruggedness (Note 3)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
dv/dt
dv/dt
TJ
Tstg
Ratings
SVSP7N60FE2
SVSP7N60DE2
600
±30
7.0
4.4
28
31 83
0.25 0.67
309
15
50
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
SVSP7N60FE2
SVSP7N60DE2
4.1 1.5
62.5 62.0
Unit
V
V
A
A
W
W/C
mJ
V/ns
V/ns
C
C
Unit
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 2 of 8



SVSP7N60FE2
Silan
Microelectronics
SVSP7N60F(D)E2_Datasheet
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
on State Resistance
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS=VDS, ID=250µA
RDS(on) VGS=10V, ID=3.5A
Rg
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
f=1MHz
VDS=100V, VGS=0V,
f=1.0MHz
VDD=300V, ID=7.0A,
VGS=10V, RG=24
(Note 4,5)
VDS=480V, ID=7.0A,
VGS=10V
(Note 4,5)
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
IS Integral Reverse P-N Junction
Pulsed Source Current
ISM Diode in the MOSFET
Diode Forward Voltage
VSD IS=7.0A,VGS=0V
Reverse Recovery Time
Trr IS=7.0A,VGS=0V,
Reverse Recovery Charge
Notes:
Qrr dIF/dt=100A/µs
(Note 4)
1. L=79mH,IAS=2.8A,VDD=100V, RG=25, starting temperature TJ=25C;
2. VDS=0~400V,ISD<=7.0A, TJ=25C;
3. VDS=0~480V;
4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
5. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
--
0.48
26
400
25
1.2
13
29
37
26
12
3.7
4.9
Typ.
--
--
--
321
2.5
Max.
--
1.0
±100
4.0
0.58
--
--
--
--
--
--
--
--
--
--
--
Max.
7.0
28
1.4
--
--
Unit
V
µA
nA
V
pF
ns
nC
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 3 of 8







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