DatasheetsPDF.com

TO-220 ■ High ruggedness ■ RDS(ON) (Max 3.6m Ω)@VGS=10V ■ Gate Charge (Typ 184nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1.Gate 2.Drain 3.Source General Description This power MOSFET is produced with advanced VDMOS technolog...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)