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SW7N60A
N-channel MOSFET
Description
SAMWIN SW7N60A N-channel
MOSFET
Features ■ High ruggedness ■ RDS(ON) (Max 1.3 Ω)@VGS=10V ■ Gate Charge (Typ 38nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID : 7.0A RDS(ON) : 1.3ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General Description This power
MOSFET
is produced with advanced VDMOS technology of S...
SAMWIN
Download SW7N60A Datasheet
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