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SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 0.85 ohm : 8.5 A : 36 nc : 125 W
SW840
This power MOSFET is produced with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switching time, lo...
