• TrenchFET® Gen IV power MOSFET
• Very low RDS - Qg figure of merit (FOM)
• Tuned for the lowest RDS - Qoss FOM
• 100 % Rg and UIS tested
• Top side cooling feature provides additional venue for thermal transfer
• Material categorization: for definitions of compliance please see www.vishay.com/doc?...
SiDR626EP PDF File
