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SiHFI820G
Power MOSFET
Description
IRFI820G, SiHFI820G Vishay Siliconix Power
MOSFET
PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 24 3.3 13 Single D FEATURES 500 3.0 Isolated Package High
Voltage
Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Dynamic dV/dt Rating Low Thermal Resistance Lead (P...
Vishay Siliconix
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