IRFIBF30G, SiHFIBF30G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
900
VGS = 10 V
3.7
78
10
42
Single
D TO-220 FULLPAK
G
GDS
S N-Channel MOSFET
FEATURES Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Dyn...
