Programmable Oscillator. SiT8008 Datasheet


SiT8008 Datasheet PDF


Part Number

SiT8008

Description

Low Power Programmable Oscillator

Manufacture

Sitime

Total Page 16 Pages
Datasheet
Download SiT8008 Datasheet



SiT8008
SiT8008
Low Power Programmable Oscillator
Features
Any frequency between 1 MHz and 110 MHz accurate to 6 decimal
places
Operating temperature from -40°C to 85°C. Refer to SiT8918 and
SiT8920 for high temperature options
Excellent total frequency stability as low as ±20 PPM
Low power consumption of 3.6 mA typical
Programmable drive strength for improved jitter, system EMI
reduction, or driving large capacitive loads
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with Time Machine II and field programmable
oscillators
Pb-free, RoHS and REACH compliant
Electrical Characteristics[1]
TThhee SSmmaarrtt TTiimmiinngg CChhooiiccee
Applications
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD,
GPON, EPON, etc
Ideal for high-speed serial protocols such as: USB, SATA, SAS,
Firewire, 100M / 1G / 10G Ethernet, etc.
Parameter and Conditions
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency Range
Output Frequency Range
f 1 – 110 MHz
Frequency Stability and Aging
Frequency Stability
F_stab
-20
– +20 PPM Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
-25
+25
PPM
variations over operating temperature, rated power supply
voltage and load (15 pF ± 10%).
-50 – +50 PPM
Operating Temperature Range
Operating Temperature Range
T_use
-20
– +70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage and Current Consumption
Supply Voltage
Vdd 1.62 1.8 1.98
V Contact SiTime for 1.5V support
2.25 2.5 2.75
V
2.52 2.8 3.08
V
2.7 3.0 3.3
V
2.97 3.3 3.63
V
2.25 – 3.63 V
Current Consumption
Idd – 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V, 3.3V, 2.25V to 3.63V
– 3.6 4.2 mA No load condition, f = 20 MHz, Vdd = 2.5V
– 3.4 3.9 mA No load condition, f = 20 MHz, Vdd = 1.8V
OE Disable Current
I_OD
4 mA Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down
– – 3.8 mA Vdd = 1.8V, OE = GND, output is Weakly Pulled Down
Standby Current
I_std
2.6 4.3 A ST = GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down
– 1.4 2.5 A ST = GND, Vdd = 2.5V, Output is Weakly Pulled Down
– 0.6 1.3 A ST = GND, Vdd = 1.8V, Output is Weakly Pulled Down
LVCMOS Output Characteristics
Duty Cycle
DC 45 – 55 % All Vdds
Rise/Fall Time
Tr, Tf
1
2 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
1.3 2.5
ns Vdd =1.8V, 20% - 80%
– – 2 ns Vdd = 2.25V - 3.63V, 20% - 80%
Output High Voltage
VOH
90%
– Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage
VOL
10%
Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Input Characteristics
Input High Voltage
VIH 70%
– Vdd Pin 1, OE or ST
Input Low Voltage
VIL –
30%
Vdd Pin 1, OE or ST
Input Pull-up Impedence
Z_in
87 100 kPin 1, OE logic high or logic low, or ST logic high
2 – – MPin 1, ST logic low
Note:
1. All electrical specifications in the above table are specified with 15 pF output load at default drive strength and for all Vdd(s) unless otherwise stated.
SiTime Corporation
Rev. 1.11
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised May 27, 2013

SiT8008
SiT8008
Low Power Programmable Oscillator
Electrical Characteristics[1] (continued)
TThhee SSmmaarrtt TTiimmiinngg CChhooiiccee
Parameter and Conditions
Symbol
Min.
Startup Time
Enable/Disable Time
Resume Time
T_start
T_oe
T_resume
RMS Period Jitter
RMS Phase Jitter (random)
T_jitt
T_phj
Typ.
Max.
Unit
Startup and Resume Timing
– 5 ms
– 130 ns
– 5 ms
Jitter
1.76
3
ps
1.78
3
ps
0.5 0.9 ps
1.3 2 ps
Condition
Measured from the time Vdd reaches its rated minimum value
f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Measured from the time ST pin crosses 50% threshold
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 75 MHz, Vdd = 1.8V
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Pin Description
Pin Symbol
Functionality
Output Enable
H or Open[2]: specified frequency output
L: output is high impedance. Only output driver is disabled.
1 OE/ ST
H or Open[2]: specified frequency output
Standby
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
2
GND
Power
Electrical ground[3]
3
OUT
Output
Oscillator output
4
VDD
Power
Power supply voltage[3]
Notes:
2. A pull-up resistor of <10 kbetween OE/ ST pin and Vdd is recommended in high noise environment.
3. A capacitor value of 0.1 µF between Vdd and GND is recommended.
Top View
OE/ST 1
4 VDD
GND 2
3 OUT
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-
mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
VDD
Electrostatic Discharge
Soldering Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
Min.
-65
-0.5
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Thermal Consideration
Package
7050
5032
3225
2520
2016
JA, 4 Layer Board (°C/W)
191
97
109
117
124
JA, 2 Layer Board (°C/W)
263
199
212
222
227
JC, Bottom
(°C/W)
30
24
27
26
26
Environmental Compliance
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Parameter
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev. 1.11
Page 2 of 11
www.sitime.com




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