Thyristor. TF44018C Datasheet

TF44018C Datasheet PDF


TF44018C
Replaces March 1998 version, DS4272- 2.3
TF440..C
TF440..C
Fast Switching Thyristor
DS4272-3.0 January 2000
APPLICATIONS
s High Power Inverters And Choppers
s UPS
s Railway Traction
s Induction Heating
s AC Motor Drives
s Cycloconverters
KEY PARAMETERS
VDRM
IT(RMS)
ITSM
dV/dt
2000V
400A
4000A
200V/µs
dI/dt 500A/µs
tq 50µs
FEATURES
s Double Side Cooling
s High Surge Capability
s High Voltage
VOLTAGE RATINGS
Type Number
TF440 20C
TF440 18C
TF440 16C
TF440 14C
Repetitive
Peak
Voltages
VV
DRM RRM
2000
1800
1600
1400
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
I = I = 25mA
DRM RRM
at V or V & T
RRM
DRM
vj
Outline type code: MU86.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
IT(AV)
IT(RMS)
Mean on-state current
RMS value
Conditions
Half sinewave, 50Hz, Tcase = 80oC
Half sinewave, 50Hz, Tcase = 80oC
Max.
255
Units
A
400 A
1/13


Part TF44018C
Description Fast Switching Thyristor
Feature TF44018C; TF440..C TF440..C Fast Switching Thyristor Replaces March 1998 version, DS4272- 2.3 DS4272-3.0 Janu.
Manufacture Dynex Semiconductor
Datasheet
Download TF44018C Datasheet


TF440..C TF440..C Fast Switching Thyristor Replaces March 1 TF44018C Datasheet





TF44018C
TF440..C
SURGE RATINGS
Symbol
Parameter
I Surge (non-repetitive) on-state current
TSM
I2t I2t for fusing
Conditions
10ms half sine; V = 0% V , T = 125˚C
R RRM j
10ms half sine; VR = 0% VRRM, Tj = 125˚C
Max. Units
4.0 kA
80.0 x 103 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
T Virtual junction temperature
vj
T Storage temperature range
stg
- Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 5.0kN
with mounting compound
Double side
Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.07 oC/W
- 0.133 oC/W
- 0.154 oC/W
- 0.02 oC/W
- 0.04 oC/W
- 125 oC
- 125 oC
-40 150
oC
4.75 5.25 kN
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
tp = 1ms
dIR/dt
QRA1
0.5x IRR
IRR
2/13



TF44018C
DYNAMIC CHARACTERISTICS
TF440..C
Symbol
Parameter
Conditions
Min. Max. Units
VTM Maximum on-state voltage
At 450A peak, T = 25oC
case
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V T = 125oC, Gate open circuit
DRM j
dI/dt Rate of rise of on-state current
Gate source 20V, 20
tr 0.5µs, Tj = 125˚C
Repetitive 50Hz
Non-repetitive
VT(TO)
Threshold voltage
At Tvj = 125oC
rT On-state slope resistance
At Tvj = 125oC
tgd
t(ON)TOT
Delay time
Total turn-on time
Tj = 25˚C, IT = 100A,
VD = 50V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
I Holding current
H
T = 25oC, I = 1A, V = 12V
j TM D
t Turn-off time
q
*Typical value.
T = 125˚C, I = 200A, V =
jT R
dV/dt = 200V/µs (Linear to
50V,
60%
V ),
DRM
tq
code:
C
dI /dt
R
=
30A/µs,
Gate
open
circuit
-
-
-
-
-
-
-
-
-
-
-
2.0 V
25 mA
200 V/µs
500 A/µs
800 A/µs
1.25 V
1.66 m
3* µs
1.5* µs
70 mA
50 µs
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
IGT
V
GD
VRGM
IFGM
P
GM
P
G(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
V
DRM
=
12V,
T
case
=
25oC,
R
L
=
6
VDRM = 12V, Tcase = 25oC, RL = 6
At
V
DRM
T
case
=
125oC,
R
L
=
1k
Anode positive with respect to cathode
Typ. Max. Units
- 3.0 V
- 200 mA
- 0.2 V
- 5.0 V
- 4A
- 16 W
- 3W
3/13






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