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TGAN25N120ND

Part Number	TGAN25N120ND
Manufacturer	TRinno
Description	NPT Trench IGBT
Published	Jun 17, 2016
Detailed Description	Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient ...
Datasheet	TGAN25N120ND PDF File

Overview

Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGAN25N120ND NPT Trench IGBT E GC Device TGAN25N120ND Package TO-3PN Marking TGAN25N120ND Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Diode Maximum Forward Current TC = 100 ℃ Power Dissipation TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lea...

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