• Frequency Range: DC - 18 GHz • 47.3 dBm Nominal PSAT at 3 GHz • 69.5% Maximum PAE • 19.8 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 200 - 1000 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.82 x 2.48 x 0.10 mm
Functional Bl...
TGF2023-2-10 PDF File
