HEMT. TGI0910-50 Datasheet

TGI0910-50 Datasheet PDF

Part TGI0910-50
Description MICROWAVE POWER GaN HEMT
Feature MICROWAVE POWER GaN HEMT TGI0910-50 FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 4.
Manufacture Toshiba
Datasheet
Download TGI0910-50 Datasheet





TGI0910-50
MICROWAVE POWER GaN HEMT
TGI0910-50
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT
ŋHIGH POWER
Pout= 47.0dBm at Pin= 41dBm
ŋHIGH GAIN
GL= 9.0dB at Pin= 20dBm
ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power
Drain Current
Power Added Efficiency
Pout
IDS
add
VDS= 24V
IDSset= 1.5A
f= 9.5 to 10.5 GHz
@Pin= 41.0dBm
dBm 46.0 47.0
A
5.0
6.0
%
31
Linear Gain
Channel Temperature Rise
GL
Tch
@Pin= 20dBm
dB
(VDS IDS Pin Pout)
Rth(c-c)
°C
7.0
9.0
130 150
Recommended Gate Resistance(Rg): 13.3
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
SYMBOL
gm
VGSoff
IDSS
CONDITIONS
VDS= 5V
IDS= 5.0A
VDS= 5V
IDS= 23mA
VDS= 5V
VGS= 0V
Gate-Source Breakdown Voltage
VGSO IGS= -10mA
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
4.5
V
-1.0 -4.0 -6.0
A
18
V
-10
°C/W
1.4
1.6
The information contained herein is presented as guidance for product use. No responsibility is assumed by Toshiba
Infrastructure Systems & Solutions Corporation (hereinafter, referred to as “TISS”) for any infringement of patents or
any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual
property right is granted by this document. The information contained herein is subject to change without prior notice.
It is advisable to contact TISS before proceeding with design of equipment incorporating this product.
©2019 Toshiba Infrastructure Systems & Solutions Corporation
3_20190926_No1255 Page: 1 / 5



TGI0910-50
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaN HEMT
TGI0910-50
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
50
Gate-Source Voltage
VGS
V
-10
Drain Current
Total Power Dissipation (Tc= 25°C)
Channel Temperature
Storage Temperature
IDS
A
15.0
PT
W
140
Tch
°C
250
Tstg
°C
-65 to +175
PACKAGE OUTLINE ( 7-AA04A )
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
©2019 Toshiba Infrastructure Systems & Solutions Corporation
3_20190926_No1255 Page: 2 / 5




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