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TGI9098-100P

Toshiba

MICROWAVE POWER GaN HEMT


Description
FEATURES ŋINTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 50.0dBm at Pin= 42dBm ŋHIGH GAIN GL= 12.0dB at 9.0GHz to 9.8GHz ŋHERMETICALLY SEALED PACKAGE ŋPULSE OPERATION Pulse width= 100μs, Duty cycle= 10% MICROWAVE POWER GaN HEMT TGI9098-100P RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power (pulsed) Drain Current (pulsed) Power Added Effic...



Toshiba

TGI9098-100P

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