･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.5dBm at 9.5GHz to 10.5GHz ･HIGH GAIN
G1dB= 6.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM0910-8
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTIC...
TIM0910-8 PDF File
