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TIM1213-2L

Part Number	TIM1213-2L
Manufacturer	Toshiba
Description	MICROWAVE POWER GaAs FET
Published	Jun 20, 2020
Detailed Description	FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 7.5dB at 12...
Datasheet	TIM1213-2L PDF File

Overview

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.
5dBm at 12.
7GHz to 13.
2GHz ･HIGH GAIN G1dB= 7.
5dB at 12.
7GHz to 13.
2GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1213-2L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 9V IDSset= 1.
0A f= 12.
7 to 13.
2GHz UNIT dBm dB A Gain Flatness G dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 22.
0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) ...

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