www.DataSheet4U.com
TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band)
Features High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz Broad Band Internally Matched Hermetically sealed package RF Performance Specifications (Ta = 25° C)
Characteristics Output Power at 1dB Co...