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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
n HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz
TIM1414-4LA P reliminaly
n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS SYMBOL CONDITION Outp...
