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MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TIM3742-8UL
HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz HIGH GAIN G1dB=11.0dB at 3.7GHz to 4.2GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Compression Point ...
