www.DataSheet4U.com
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TIM4450-4UL
HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Compression Point ...
