MICROWAVE POWER GaAs FET
TIM5964-35SLA-422
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.5dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN
G1dB= 8.0dB at 5.85GHz to 6.75GHz ŋLOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output P...
