FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 5.85GHz to 6.75GHz ･HIGH GAIN
G1dB= 8.0dB(Min.) at 5.85GHz to 6.75GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 25.5dBm Single Carrier Level.
MICROWAVE POWER GaAs FET
TIM5964-4SL-422
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Ou...
