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TIM5964-4UL

Part Number	TIM5964-4UL
Manufacturer	Toshiba Semiconductor
Description	MICROWAVE POWER GaAs FET
Published	Feb 22, 2010
Detailed Description	FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9...
Datasheet	TIM5964-4UL PDF File

Overview

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.
5dBm at 5.
9GHz to 6.
4GHz ･HIGH GAIN G1dB= 10.
0dB at 5.
9GHz to 6.
4GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 ∆G VDS= 10V IDSset= 0.
9A f = 5.
9 to 6.
4GHz UNIT dBm dB A dB Power Added Efficiency ηadd % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 25.
5dBm, ∆f= 5MHz (Single Carrier Level) A Channel Temperature Rise ∆Tch (VDS X IDS + Pin – P1dB) X R...

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