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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM6472-8UL
TECHNICAL DATA FEATURES
n HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression...
