FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 44.5dBm at 7.1GHz to 7.9GHz ・HIGH GAIN
G1dB= 8.5dB at 7.1GHz to 7.9GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7179-25UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
...