FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.0dBm at 7.1GHz to 7.9GHz ･HIGH GAIN
G1dB= 8.5dB at 7.1GHz to 7.9GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7179-30UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
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