・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 46.5dBm at 7.1GHz to 7.9GHz ・HIGH GAIN
G1dB= 6.5dB at 7.1GHz to 7.9GHz ・LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWE...