MICROWAVE POWER GaAs FET
TIM7785-25UL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 44.5dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -47dBc at Pout= 33.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at...
