･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 28.5dBm Single Carrier Level.
MICROWAVE POW...
TIM7785-8SL PDF File
