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TK10A60E

MOSFETs

Description

TK10A60E MOSFETs Silicon N-Channel MOS (π-MOS) TK10A60E 1. Applications Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2:...

Toshiba Semiconductor

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