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TK10E60W

Toshiba Semiconductor
Part Number TK10E60W
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 11, 2014
Datasheet PDF File TK10E60W PDF File

TK10E60W
TK10E60W


Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3.Packaging and Internal Circuit 1: Gate...




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