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TK11S10N1L
Silicon N-channel MOSFET
Description
MOSFET
s Silicon N-channel MOS (U-MOS-H) TK11S10N1L 1. Applications Automotive Motor Drivers Switching
Voltage
Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.1 mA) ...
Toshiba
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